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R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
36-Mbit QDRTMII SRAM 2-word Burst
REJ03C0341-0003 Preliminary Rev. 0.03 Apr. 11, 2008
Description
The R1Q2A3636B is a 1,048,576-word by 36-bit, the R1Q2A3618B is a 2,097,152-word by 18-bit, and the R1Q2A3609B is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.
Features
* * * * * * * * * * * * * * 1.8 V 0.1 V power supply for core (VDD) 1.4 V to VDD power supply for I/O (VDDQ) DLL circuitry for wide output data valid window and future frequency scaling Separate independent read and write data ports with concurrent transactions 100% bus utilization DDR read and write operation Two-tick burst for low DDR transaction size Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two output clocks (C and /C) for precise flight time and clock skew matching-clock and data delivered together to receiving device Internally self-timed write control Clock-stop capability with s restart User programmable impedance output Fast clock cycle time: 4.0 ns (250 MHz)/5.0 ns (200 MHz)/6.0 ns (167 MHz) Simple control logic for easy depth expansion JTAG boundary scan
Notes: QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, NEC, Samsung, and Renesas Technology Corp. Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest Renesas Technology's Sales Dept. regarding specifications.
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 1 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
Ordering Information
Part Number Organization Cycle time 4.0 ns 5.0 ns 6.0 ns 4.0 ns 5.0 ns 6.0 ns 4.0 ns 5.0 ns 6.0 ns Clock frequency 250 MHz 200 MHz 167 MHz 250 MHz 200 MHz 167 MHz 250 MHz 200 MHz 167 MHz Package Plastic FBGA 165-pin PLBG0165FB-A Notes
R1Q2A3636BBG-40R 1-M word x 36-bit R1Q2A3636BBG-50R R1Q2A3636BBG-60R R1Q2A3618BBG-40R 2-M word x 18-bit R1Q2A3618BBG-50R R1Q2A3618BBG-60R R1Q2A3609BBG-40R 4-M word x 9-bit R1Q2A3609BBG-50R R1Q2A3609BBG-60R Notes: 1. Part Number (0:1) R1 : Renesas Memory prefix (2:3) Q2 : QDRII 2-word Burst SRAM Q3 : QDRII 4-word Burst SRAM Q4 : DDRII 2-word Burst SRAM Q5 : DDRII 4-word Burst SRAM Q6 : DDRII 2-word Burst SRAM Separate I/O (4) A : VDD=1.8V (5:6) 36 : Density = 36Mb 72 : Density = 72Mb (7:8) 36 : Organization = x36 18 : Organization = x18 09 : Organization = x9
(9)
(10:11) (12:13)
(14) (15)
(16) 2. Marking Name Marking Name(0:14) =Part Number(0:14) ------------Pb Marking Name(0:16) =Part Number(0:14)+Bx------------Pb-free (Example) R1Q2A3609BBG-60R ------------Pb R1Q2A3609BBG-60RB0 ------------Pb-free
R : 1stGeneration A : 2ndGeneration B : 3rdGeneration BG : Package type=BGA 60 : Cycle time=6.0 ns 50 : Cycle time=5.0 ns 40 : Cycle time=4.0 ns 33 : Cycle time=3.3 ns R : Temperature range= 0C 70C I : Temperature range= -40C 85C B : Pb-free T : Tape&Reel S : Pb-free and Tape&Reel None : Standard (Pb and Tray) 0 9 , A Z :Renesas internal use
(x=0 9 , A Z)
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 2 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
Pin Arrangement
R1Q2A3636B series
1 A B C D E F G H J K L M N P R 2 3 NC 4 5 6 7 8 9 10 NC Q17 Q7 D15 D6 Q14 D13 11 CQ Q8 D8 D7 Q6 Q5 D5 ZQ D4 Q3 Q2 D2 D1 Q0 TDI
/CQ Q27 D27 D28 Q29 Q30 D30 /DOFF D31 Q32 Q33 D33 D34 Q35 TDO
VSS Q18 Q28 D20 D29 Q21 D22 VREF Q31 D32 Q24 Q34 D26 D35 TCK
D18 D19 Q19 Q20 D21 Q22 VDDQ D23 Q23 D24 D25 Q25 Q26 SA
/W SA VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS SA SA
/BW2 /BW3 SA VSS VSS VDD VDD VDD VDD VDD VSS VSS SA SA SA
/K K SA VSS VSS VSS VSS VSS VSS VSS VSS VSS SA C /C
/BW1 /BW0 SA VSS VSS VDD VDD VDD VDD VDD VSS VSS SA SA SA
/R SA VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS SA SA
SA D17 D16 Q16 Q15 D14 Q13 VDDQ D12 Q12 D11 D10 Q10 Q9 SA
VREF
Q4 D3 Q11 Q1 D9 D0 TMS
(Top View) R1Q2A3618B series
1 A B C D E F G H J K L M N P R 2 3 4 5 6
/CQ
NC NC NC NC NC NC /DOFF NC NC NC NC NC NC TDO
VSS
Q9 NC D11 NC Q12 D13
SA
D9 D10 Q10 Q11 D12 Q13
VREF
NC NC Q15 NC D17 NC TCK
VDDQ
D14 Q14 D15 D16 Q16 Q17 SA
/W SA VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS SA SA
/BW1
NC
SA VSS VSS VDD VDD VDD VDD VDD VSS VSS SA SA SA
/K K SA VSS VSS VSS VSS VSS VSS VSS VSS VSS SA C /C
7 NC
8
9
/BW0 SA VSS VSS VDD VDD VDD VDD VDD VSS VSS SA SA SA
/R SA VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS SA SA
SA
NC NC NC NC NC NC
10 NC NC Q7 NC D6 NC NC
VDDQ
NC NC NC NC NC NC SA
VREF
Q4 D3 NC Q1 NC D0 TMS
11 CQ Q8 D8 D7 Q6 Q5 D5 ZQ D4 Q3 Q2 D2 D1 Q0 TDI
(Top View)
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 3 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B R1Q2A3609B series
1 A B C D E F G H J K L M N P R 2 3 4 5 6
/CQ
NC NC NC NC NC NC /DOFF NC NC NC NC NC NC TDO
VSS
NC NC D5 NC NC D6
SA
NC NC NC Q5 NC Q6
VREF
NC NC Q7 NC D8 NC TCK
VDDQ
NC NC D7 NC NC Q8 SA
/W SA VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS SA SA
NC
NC
SA VSS VSS VDD VDD VDD VDD VDD VSS VSS SA SA SA
/K K SA VSS VSS VSS VSS VSS VSS VSS VSS VSS SA C /C
7 NC
8
9
/BW SA VSS VSS VDD VDD VDD VDD VDD VSS VSS SA SA SA
/R SA VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS SA SA
SA
NC NC NC NC NC NC
10 SA NC NC NC D3 NC NC
VDDQ
NC NC NC NC NC NC SA
VREF
Q2 NC NC NC NC D0 TMS
11 CQ Q4 D4 NC Q3 NC NC ZQ D2 NC Q1 D1 NC Q0 TDI
(Top View)
Notes: 1. Address expansion order for future higher density SRAMs (i.e. 72Mb 144Mb 288Mb): (9A 3A 10A) 2A 7A 5B.
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 4 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
Pin Description
Name SA I/O type Input Descriptions Synchronous address inputs: These inputs are registered and must meet the setup and hold times around the rising edge of K for READ cycles and must meet the setup and hold times around the rising edge of /K for WRITE cycles. All transactions operate on a burst-of-two words (one clock period of bus activity). These inputs are ignored when device is deselected. Synchronous read: When low, this input causes the address inputs to be registered and a READ cycle to be initiated. This input must meet setup and hold times around the rising edge of K. Synchronous write: When low, this input causes the address inputs to be registered and a WRITE cycle to be initiated. This input must meet setup and hold times around the rising edge of K. Synchronous byte writes: When low, these inputs cause their respective byte to be registered and written during WRITE cycles. These signals must meet setup and hold times around the rising edges of K and /K for each of the two rising edges comprising the WRITE cycle. See Byte Write Truth Table for signal to data relationship. Input clock: This input clock pair registers address and control inputs on the rising edge of K, and registers data on the rising edge of K and the rising edge of /K. /K is ideally 180 degrees out of phase with K. All synchronous inputs must meet setup and hold times around the clock rising edges. These balls cannot remain VREF level. Output clock: This clock pair provides a user-controlled means of tuning device output data. The rising edge of /C is used as the output timing reference for first output data. The rising edge of C is used as the output timing reference for second output data. Ideally, /C is 180 degrees out of phase with C. C and /C may be tied high to force the use of K and /K as the output reference clocks instead of having to provide C and /C clocks. If tied high, C and /C must remain high and not to be toggled during device operation. These balls cannot remain VREF level. DLL disable: When low, this input causes the DLL to be bypassed for /DOFF Input stable, low frequency operation. Output impedance matching input: This input is used to tune the device outputs to the system data bus impedance. Q and CQ output impedance are set to 0.2 x RQ, where RQ is a resistor from this ball to ground. This ball can be connected directly to VDDQ, which enables the minimum impedance mode. This ball cannot be connected directly to VSS or left unconnected. IEEE1149.1 test inputs: 1.8 V I/O levels. These balls may be left not TMS Input connected if the JTAG function is not used in the circuit. IEEE1149.1 clock input: 1.8 V I/O levels. This ball must be tied to VSS if the JTAG function is not used TCK Input in the circuit. Synchronous data inputs: Input data must meet setup and hold times around the rising edges of K and /K during WRITE operations. See Pin Arrangement figures for ball site location of individual signals. The x9 device uses D0 to D8. Remaining signals are not used. The x18 device uses D0 to D17. Remaining signals are not used. The x36 device uses D0 to D35. Synchronous echo clock outputs: The edges of these outputs are tightly matched to the synchronous data outputs and can be used as a data valid indication. These signals run freely and do not stop when Q tristates. IEEE 1149.1 test output: 1.8 V I/O level. Synchronous data outputs: Output data is synchronized to the respective C and /C, or to the respective K and /K if C and /C are tied high. This bus operates in response to /R commands. See Pin Arrangement figures for ball site location of individual signals. The x9 device uses Q0 to Q8. Remaining signals are not used. The x18 device uses Q0 to Q17. Remaining signals are not used. The x36 device uses Q0 to Q35. Notes
/R
Input
/W
Input
/BWx
Input
K, /K
Input
C, /C
Input
/DOFF ZQ
Input Input
TMS TDI TCK D0 to Dn
Input Input Input
CQ, /CQ
Output
TDO Q0 to Qn
Output Output
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 5 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
Name VDD VDDQ VSS VREF NC I/O type Supply Supply Supply Descriptions Power supply: 1.8 V nominal. See DC Characteristics and Operating VDD Supply Conditions for range. Power supply: Isolated output buffer supply. Nominally 1.5 V. 1.8 V is also permissible. See DC Characteristics and Operating Conditions for range. Power supply: Ground. HSTL input reference voltage: Nominally VDDQ/2, but may be adjusted to improve system noise margin. Provides a reference voltage for the HSTL input buffers. No connect: These signals are not internally connected. These signals can be left floating or connected to ground to improve package heat dissipation. Notes
Notes: 1. All power supply and ground balls must be connected for proper operation of the device.
Block Diagram (R1Q2A3636B / R1Q2A3618B / R1Q2A3609B series)
19/20/21 Address Address /R /W K /K 72 /36 /18 4/2/1 72 /36 /18 Registry and Logic ZQ 19/20/21
/W
MUX
Write Register
Output Register
/BWx Data 36/18/9 D (Data in) /R K /K K Registry and Logic
Write Driver
Sense Amp
Array
Output Select
Output Buffer
Memory
72 /36 /18
Q (Data out) 36/18/9
2 CQ /CQ
C
C, /C or K, /K
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 6 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
General Description
Power-up and Initialization Sequence The following supply voltage application sequence is recommended: VSS, VDD, VDDQ, VREF then VIN. After the stable power, there are three possible sequences. 1. Sequence when DLL disable (/DOFF pin fixed low) Just after the stable power and clock (K, /K, C, /C), 1024 NOP cycles (min.) are required for all operations, including JTAG functions, to become normal. 2a. Sequence controlled by /DOFF pin when DLL enable Just after the stable power and clock (K, /K, C, /C), take /DOFF to be high. The additional 1024 NOP cycles (min.) are required to lock the DLL and for all operations to become normal. 2b. Sequence controlled by Clock (/DOFF pin fixed high) when DLL enable If /DOFF pin is fixed high with unstable clock, the clock (K, /K, C, /C) must be stopped for 30ns (min.). During stop clock stage, C pin must tie low for 30 ns (min.). C, /C, K and /K cannot remain VREF level. The additional 1024 NOP cycles (min.) are required to lock the DLL and for all operations to become normal. Notes: 1. After K or C clock is stopped, clock recovery cycles (1024 NOP cycles (min.)) are required for read/write operations to become normal. 2. When DLL is enable and the operating frequency is changed, DLL reset should be required again. After DLL reset again, the 1024 NOP cycles (min.) are needed to lock the DLL. 1. Sequence when DLL disable (/DOFF pin fixed low)
Status Power Up Unstable Clock Stage Stable Clock Stage NOP Stage Normal Operation
VDD VDDQ VREF VIN C, /C, K, /K
1024cycle min.
2a. Sequence controlled by /DOFF pin when DLL enable
Status Power Up Unstable Clock Stage Stable Clock Stage NOP & DLL Locking Stage Normal Operation
VDD VDDQ VREF /DOFF
1024cycle min.
C, /C, K, /K
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 7 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B 2b. Sequence controlled by Clock (/DOFF pin fixed high) when DLL enable
Status
Power Up Unstable Clock Stage Stop Clock Stage NOP & DLL Locking Stage Normal Operation
VDD VDDQ VREF /DOFF
30ns min. 1024cycle min.
C, /C, K, /K
DLL Constraints 1. DLL uses either K or C clock as its synchronizing input, the input should have low phase jitter which is specified as TKC var. 2. The lower end of the frequency at which the DLL can operate is 119MHz. Programmable Output Impedance 1. Output buffer impedance can be programmed by terminating the ZQ ball to VSS through a precision resistor (RQ). The value of RQ is five times the output impedance desired. The allowable range of RQ to guarantee impedance matching with a tolerance of 10% is 250 typical. The total external capacitance of ZQ ball must be less than 7.5 pF.
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 8 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
K Truth Table
Operation Write Cycle: Load address, input write data on consecutive K and /K rising edges Read Cycle: Load address, output read data on consecutive C and /C rising edges NOP (No operation) Standby (Clock stopped) K /R x /W L D or Q Data in Input data Output clock Data out Output data Output clock D(A+0) K(t) Q(A+0) /C(t+1) D(A+1) /K(t) Q(A+1) C(t+2)
L
x
Stopped
H x
H x
D = x or Q = High-Z Previous state
Notes: 1. H: high level, L: low level, x: don't care, : rising edge. 2. Data inputs are registered at K and /K rising edges. Data outputs are delivered at C and /C rising edges, except if C and /C are high, then data outputs are delivered at K and /K rising edges. 3. /R and /W must meet setup/hold times around the rising edges (low to high) of K and are registered at the rising edge of K. 4. This device contains circuitry that will ensure the outputs will be in high-Z during power-up. 5. Refer to state diagram and timing diagrams for clarification. 6. When clocks are stopped, the following cases are recommended; the case of K = low, /K = high, C = low and /C = high, or the case of K = high, /K = low, C = high and /C = low. This condition is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 9 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
Byte Write Truth Table (x36)
Operation Write D0 to D35 Write D0 to D8 Write D9 to D17 Write D18 to D26 Write D27 to D35 Write nothing K /K /BW0 L L L L H H H H H H H H /BW1 L L H H L L H H H H H H /BW2 L L H H H H L L H H H H /BW3 L L H H H H H H L L H H
Notes: 1. H: high level, L: low level, : rising edge. 2. Assumes a WRITE cycle was initiated. /BWx can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied.
Byte Write Truth Table (x18)
Operation Write D0 to D17 K /K /BW0 /BW1 L L L L Write D0 to D8 L H L H Write D9 to D17 H L H L Write nothing H H H H Notes: 1. H: high level, L: low level, : rising edge. 2. Assumes a WRITE cycle was initiated. /BWx can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied.
Byte Write Truth Table (x9)
Operation Write D0 to D8 K /K /BW L L Write nothing H H Notes: 1. H: high level, L: low level, : rising edge. 2. Assumes a WRITE cycle was initiated. /BWx can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied.
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 10 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
Bus Cycle State Diagram
/R = H /R = H
Read Port NOP RInit = 0
/R = L
Always Load New Read Address /R = L Read Double
Supply voltage provided
Power Up
Supply voltage provided
Load New Write Address at /K
Always
Write Double at /K
Write Port NOP
/W = L
/W = L /W = H
/W = H
Notes: 1. The address is concatenated with one additional internal LSB to facilitate burst operation. The address order is always fixed as: xxx...xxx+0, xxx...xxx+1. Bus cycle is terminated at the end of this sequence (burst count = 2). 2. Read and write state machines can be active simultaneously. 3. State machine control timing sequence is controlled by K.
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 11 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
Absolute Maximum Ratings
Parameter Input voltage on any ball Input/output voltage Core supply voltage Output supply voltage Junction temperature Storage temperature Symbol VIN VI/O VDD VDDQ Tj TSTG Rating -0.5 to VDD + 0.5 (2.5 V max.) -0.5 to VDDQ + 0.5 (2.5 V max.) -0.5 to 2.5 -0.5 to VDD +125 (max) -55 to +125 Unit V V V V C C Notes 1, 4 1, 4 1, 4 1, 4
Notes: 1. All voltage is referenced to VSS. 2. Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be restricted the Operation Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. 3. These CMOS memory circuits have been designed to meet the DC and AC specifications shown in the tables after thermal equilibrium has been established. 4. The following supply voltage application sequence is recommended: VSS, VDD, VDDQ, VREF then VIN. Remember, according to the Absolute Maximum Ratings table, VDDQ is not to exceed 2.5 V, whatever the instantaneous value of VDDQ.
Recommended DC Operating Conditions
(Ta = 0 to +70C)
Parameter Symbol Min Typ Max Unit Notes Power supply voltage --core VDD 1.7 1.8 1.9 V Power supply voltage --I/O VDDQ 1.4 1.5 VDD V Input reference voltage --I/O VREF 0.68 0.75 0.95 V 1 Input high voltage VIH (DC) VREF + 0.1 VDDQ + 0.3 V 2, 3 Input low voltage VIL (DC) -0.3 VREF - 0.1 V 2, 3 Notes: 1. Peak to peak AC component superimposed on VREF may not exceed 5% of VREF. 2. Overshoot: VIH (AC) VDDQ + 0.5 V for t tKHKH/2 Undershoot: VIL (AC) -0.5 V for t tKHKH/2 Power-up: VIH VDDQ + 0.3 V and VDD 1.7 V and VDDQ 1.4 V for t 200 ms During normal operation, VDDQ must not exceed VDD. Control input signals may not have pulse widths less than tKHKL (min) or operate at cycle rates less than tKHKH (min). During normal operation, VIH(DC) must not exceed VDDQ and VIL(DC) must not be lower than VSS. 3. These are DC test criteria. The AC VIH / VIL levels are defined separately to measure timing parameters.
DC Characteristics
(Ta = 0 to +70C, VDD = 1.8V 0.1V)
Parameter Operating supply current (READ / WRITE) Standby supply current (NOP) (x9) (x18) (x36) (x9 / x18 / x36) Symbol IDD IDD IDD ISB1 -40 Max 600 650 700 350 -50 Max 550 600 650 340 -60 Max 500 550 600 330 Unit mA mA mA mA Notes 1, 2, 3 1, 2, 3 1, 2, 3 2, 4, 5
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 12 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
Parameter Input leakage current Output leakage current Output high voltage Output low voltage Notes: 1. 2. 3. 4. 5. Symbol ILI ILO VOH (Low) VOH VOL (Low) VOL Min -2 -5 VDDQ -0.2 VDDQ/2 -0.08 VSS VDDQ/2 -0.08 Max 2 5 VDDQ VDDQ/2 +0.08 0.2 VDDQ/2 +0.08 Unit A A V V V V Test conditions Notes 10 11 8, 9 8, 9 8, 9 8, 9
|IOH| 0.1 mA Note 6 IOL 0.1 mA Note 7
All inputs (except ZQ, VREF) are held at either VIH or VIL. IOUT = 0 mA. VDD = VDD max, tKHKH = tKHKH min. Operating supply currents are measured at 100% bus utilization. All address / data inputs are static at either VIN > VIH or VIN < VIL. Reference value (Condition=NOP currents are valid when entering NOP after all pending READ and WRITE cycles are completed.)
6. Outputs are impedance-controlled. |IOH| = (VDDQ/2)/(RQ/5) for values of 175 RQ 350 . 7. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 RQ 350 . 8. AC load current is higher than the shown DC values. AC I/O curves are available upon request. 9. HSTL outputs meet JEDEC HSTL Class I standards. 10. 0 VIN VDDQ for all input balls (except VREF, ZQ, TCK, TMS, TDI ball). 11. 0 VOUT VDDQ (except TDO ball), output disabled.
Thermal Resistance
Parameter Junction to Ambient Junction to Case Symbol JA JC Typ 24.5 5.6 Unit C/W C/W Notes
Note: These parameters are calculated under the condition of wind velocity = 1 m/s.
Capacitance
(Ta = +25C, f=1.0MHz, VDD = 1.8V, VDDQ = 1.5V)
Parameter Symbol Min Typ Input capacitance CIN 2 Clock input capacitance CCLK 2 Input/output capacitance (D, Q, ZQ) CI/O 3 Notes: 1. These parameters are sampled and not 100% tested. 2. Except JTAG (TCK, TMS, TDI, TDO) pins. Max 3 3 4.5 Unit pF pF pF Test conditions VIN = 0 V VCLK = 0 V VI/O = 0 V Notes 1, 2 1, 2 1, 2
AC Test Conditions
(Ta = 0 to +70C, VDD = 1.8V 0.1V) Input waveform (Rise/fall time 0.3 ns)
1.25 V 0.75 V 0.25 V Test points 0.75 V
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 13 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B Output waveform
VDDQ /2
Test points
VDDQ /2
Output load condition
0.75 V VDDQ /2
VREF 50 Z0 = 50 250 ZQ
SRAM
Q
AC Operating Conditions
Parameter Input high voltage Input low voltage Symbol VIH (AC) VIL (AC) Min VREF + 0.2 Typ Max VREF - 0.2 Unit V V Notes 1, 2, 3, 4 1, 2, 3, 4
Notes: 1. All voltages referenced to VSS (GND). 2. These conditions are for AC functions only, not for AC parameter test. 3. Overshoot: VIH (AC) VDDQ + 0.5 V for t tKHKH/2 Undershoot: VIL (AC) -0.5 V for t tKHKH/2 Power-up: VIH VDDQ + 0.3 V and VDD 1.7 V and VDDQ 1.4 V for t 200 ms During normal operation, VDDQ must not exceed VDD. Control input signals may not have pulse widths less than tKHKL (min) or operate at cycle rates less than tKHKH (min). 4. To maintain a valid level, the transitioning edge of the input must: a. Sustain a constant slew rate from the current AC level through the target AC level, VIL (AC) or VIH (AC). b. Reach at least the target AC level. c. After the AC target level is reached, continue to maintain at least the target DC level, VIL (DC) or VIH (DC).
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 14 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
AC Characteristics
(Ta = 0 to +70C, VDD = 1.8V 0.1V)
-40 Parameter Average clock cycle time (K, /K, C, /C) Clock phase jitter (K, /K, C, /C) Clock high time (K, /K, C, /C) Clock low time (K, /K, C, /C) Clock to /clock (K to /K, C to /C) /Clock to clock (/K to K, /C to C) Clock to data clock (K to C, /K to /C) DLL lock time (K, C) K static to DLL reset C, /C high to output valid C, /C high to output hold C, /C high to echo clock valid C, /C high to echo clock hold CQ, /CQ high to output valid CQ, /CQ high to output hold C, /C high to output high-Z C, /C high to output low-Z Address valid to K, /K rising edge Control inputs valid to K rising edge Data-in valid to K, /K rising edge K, /K rising edge to address hold Symbol tKHKH tKC var tKHKL tKLKH tKH/KH t/KHKH tKHCH tKC lock tKC reset tCHQV tCHQX tCHCQV tCHCQX tCQHQV tCQHQX tCHQZ tCHQX1 tAVKH tIVKH tDVKH tKHAX Min 4.00 1.60 1.60 1.80 1.80 0 1,024 30 -0.45 -0.45 -0.30 -0.45 0.35 0.35 0.35 0.35 0.35 Max 8.40 0.20 1.10 0.45 0.45 0.30 0.45 Min 5.00 2.00 2.00 2.20 2.20 0 1,024 30 -0.45 -0.45 -0.35 -0.45 0.40 0.40 0.40 0.40 0.40 -50 Max 8.40 0.20 1.60 0.45 0.45 0.35 0.45 Min 6.00 2.40 2.40 2.70 2.70 0 1,024 30 -0.50 -0.50 -0.40 -0.50 0.50 0.50 0.50 0.50 0.50 -60 Max 8.40 0.20 2.10 0.50 0.50 0.40 0.50 Unit ns ns ns ns ns ns ns Cycle ns ns ns ns ns ns ns ns ns ns ns ns ns ns 2 7 Notes
3
4, 7 4, 7 5 5 1 1 1 1 1
tKHIX K, /K rising edge to control inputs hold K, /K rising edge to data-in hold tKHDX 0.35 0.40 0.50 ns 1 Notes: 1. This is a synchronous device. All addresses, data and control lines must meet the specified setup and hold times for all latching clock edges. 2. VDD slew rate must be less than 0.1 V DC per 50 ns for DLL lock retention. DLL lock time begins once VDD and input clock are stable. It is recommended that the device is kept inactive during these cycles. 3. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. 4. Echo clock is very tightly controlled to data valid / data hold. By design, there is a 0.1 ns variation from echo clock to data. The datasheet parameters reflect tester guardbands and test setup variations. 5. Transitions are measured 100 mV from steady-state voltage. 6. At any given voltage and temperature tCHQZ is less than tCHQX1 and tCHQZ less than tCHQV. 7. These parameters are sampled. Remarks: 1. 2. 3. 4. 5. Test conditions as specified with the output loading as shown in AC Test Conditions unless otherwise noted. Control input signals may not be operated with pulse widths less than tKHKL (min). If C, /C are tied high, K, /K become the references for C, /C timing parameters. VDDQ is +1.5 V DC. Control signals are /R, /W, /BW, /BW0, /BW1, /BW2 and /BW3. BWn signals must operate at the same timing as Data in.
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 15 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
Timing Waveforms
Read and Write Timing
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
NOP NOP
K
READ WRITE
READ WRITE
READ WRITE
READ WRITE
NOP WRITE
NOP NOP
NOP NOP
tKHKL tKHKH tKLKH /K
tKH/KH t/KHKH
/R tIVKH /W tIVKH
A0
tKHIX
tKHIX A1
A2
A3
A4
A5
A6
A7
A8
Address tAVKH
D10
tKHAX D11 D30
D31
D50
D51
D70
D71
D80
D81
Data in tDVKH tKHDX tDVKH tKHDX
Q01 Q20 Q21 Q40 Q41 Q60 Q61
Q00
Data out -tCHQX1 CQ tCHCQV -tCHCQX /CQ tCHCQV -tCHCQX C tKHKL tKHCH /C tKHCH tKHKH tKLKH t/KHKH tKH/KH tCHQV -tCHQX tCHQV -tCHQX tCQHQV -tCQHQX
tCHQZ
Notes: 1. Q00 refers to output from address A0+0. Q01 refers to output from the next internal burst address following A0, i.e., A0+1. 2. Outputs are disable (high-Z) one clock cycle after a NOP. 3. In this example, if address A0 = A1, then data Q00 = D10, Q01 = D11. Write data is forwarded immediately as read results. 4. To control read and write operations, /BW signals must operate at the same timing as Data in. REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 16 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
JTAG Specification
These products support a limited set of JTAG functions as in IEEE standard 1149.1.
Disabling the Test Access Port
It is possible to use this device without utilizing the TAP. To disable the TAP controller without interfering with normal operation of the device, TCK must be tied to VSS to preclude mid level inputs. TDI and TMS are designed so an undriven input will produce a response identical to the application of a logic 1,and may be left unconnected. But they may also be tied to VDD through a 1k resistor.TDO should be left unconnected.
Test Access Port (TAP) Pins
Symbol I/O TCK TMS TDI Pin assignments 2R 10R 11R Description Test clock input. All inputs are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. Test mode select. This is the command input for the TAP controller state machine. Test data input. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP controller state machine and the instruction that is currently loaded in the TAP instruction. Test data output. Output changes in response to the falling edge of TCK. This is the output side of the serial registers placed between TDI and TDO. Notes
TDO
1R
Notes: The device does not have TRST (TAP reset). The Test-Logic Reset state is entered while TMS is held high for five rising edges of TCK. The TAP controller state is also reset on SRAM POWER-UP.
TAP DC Operating Characteristics
(Ta = 0 to +70C, VDD = 1.8V 0.1V)
Parameter Input high voltage Input low voltage Input leakage current Output leakage current Output low voltage Symbol VIH VIL ILI ILO Min +1.3 -0.3 -5.0 -5.0 Typ Max VDD + 0.3 +0.5 +5.0 +5.0 Unit V V A A Notes
0 V VIN VDD 0 V VIN VDD, output disabled IOLC = 100 A IOLT = 2 mA |IOHC| = 100 A |IOHT| = 2 mA
VOL1 0.2 V VOL2 0.4 V Output high voltage VOH1 1.6 V VOH2 1.4 V Notes: 1. All voltages referenced to VSS (GND). 2. Power-up: VIH VDDQ + 0.3 V and VDD +1.7 V and VDDQ +1.4 V for t 200 ms. 3. In "EXTEST" mode and "SAMPLE" mode, VDDQ is nominally 1.5 V. 4. ZQ: VIH = VDDQ.
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 17 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
TAP AC Test Conditions
Parameter Temperature Input timing measurement reference levels Input pulse levels Input rise/fall time Output timing measurement reference levels Test load termination supply voltage (VTT) Output load Symbol Ta VREF VIL, VIH tr, tf Conditions 0 Ta +70 0.9 0 to 1.8 1.0 0.9 0.9 See figures Unit C V V ns V V Notes
Input waveform
1.8 V 0.9 V 0V Test points 0.9 V
Output waveform
0.9 V
Test points
0.9 V
Output load condition
VTT = 0.9 V DUT 50 Z0 = 50 20 pF
TDO
External Load at Test
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 18 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
TAP AC Operating Characteristics
(Ta = 0 to +70C, VDD = 1.8V 0.1V)
Parameter Symbol Min Typ Max Unit Test clock (TCK) cycle time tTHTH 100 ns TCK high pulse width tTHTL 40 ns TCK low pulse width tTLTH 40 ns Test mode select (TMS) setup tMVTH 10 ns TMS hold tTHMX 10 ns Capture setup tCS 10 ns Capture hold tCH 10 ns TDI valid to TCK high tDVTH 10 ns TCK high to TDI invalid tTHDX 10 ns TCK low to TDO unknown tTLQX 0 ns TCK low to TDO valid tTLQV 20 ns Notes: 1. tCS + tCH defines the minimum pause in RAM I/O pad transitions to assure pad data capture. Notes
1 1
TAP Controller Timing Diagram
tTHTH tTHTL tTLTH
TCK tMVTH tTHMX
TMS tDVTH tTHDX
TDI tTLQV
TDO tTLQX tCS tCH
PI (SRAM)
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 19 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
Test Access Port Registers
Register name Instruction register Bypass register ID register Boundary scan register Length 3 bits 1 bits 32 bits 109 bits Symbol IR [2:0] BP ID [31:0] BS [109:1] Notes
TAP Controller Instruction Set
IR2 0 IR1 0 IR0 0 Instruction EXTEST Description The EXTEST instruction allows circuitry external to the component package to be tested. Boundary scan register cells at output balls are used to apply test vectors, while those at input balls capture test results. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into the boundary scan register using the PRELOAD instruction. Thus, during the Update-IR state of EXTEST, the output driver is turned on and the PRELOAD data is driven onto the output balls. The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in capture-DR mode and places the ID register between the TDI and TDO balls in shift-DR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the Test-Logic-Reset state. If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (high-Z), moving the TAP controller into the capture-DR state loads the data in the RAMs input into the boundary scan register, and the boundary scan register is connected between TDI and TDO when the TAP controller is moved to the shift-DR state. The RESERVED instructions are not implemented but are reserved for future use. Do not use these instructions. When the SAMPLE instruction is loaded in the instruction register, moving the TAP controller into the capture-DR state loads the data in the RAMs input and I/O buffers into the boundary scan register. Because the RAM clock(s) are independent from the TAP clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents while the input buffers are in transition (i.e., in a metastable state). Although allowing the TAP to SAMPLE metastable input will not harm the device, repeatable results cannot be expected. Moving the controller to shift-DR state then places the boundary scan register between the TDI and TDO balls. 3 3, 4 Notes 1, 2, 3
0
0
1
IDCODE
0
1
0
SAMPLE-Z
0 1
1 0
1 0
RESERVED SAMPLE (/PRELOAD)
1 1 1
0 1 1
1 0 1
RESERVED RESERVED BYPASS
The BYPASS instruction is loaded in the instruction register when the bypass register is placed between TDI and TDO. This occurs when the TAP controller is moved to the shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path.
Notes: 1. Data in output register is not guaranteed if EXTEST instruction is loaded. 2. After performing EXTEST, power-up conditions are required in order to return part to normal operation. 3. RAM input signals must be stabilized for long enough to meet the TAPs input data capture setup plus hold time (tCS plus tCH). The RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the boundary scan register. 4. Clock recovery initialization cycles are required to return from the SAMPLE-Z instruction.
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 20 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
Boundary Scan Order
Bit # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 Ball ID 6R 6P 6N 7P 7N 7R 8R 8P 9R 11P 10P 10N 9P 10M 11N 9M 9N 11L 11M 9L 10L 11K 10K 9J 9K 10J 11J 11H 10G 9G 11F 11G 9F 10F 11E 10E 10D 9E 10C 11D 9C 9D 11B 11C 9B 10B 11A 10A 9A x9 /C C SA SA SA SA SA SA SA Q0 D0 NC NC NC NC NC NC Q1 D1 NC NC NC NC NC NC Q2 D2 ZQ NC NC NC NC NC NC Q3 D3 NC NC NC NC NC NC Q4 D4 NC NC CQ SA SA Signal names x18 /C C SA SA SA SA SA SA SA Q0 D0 NC NC Q1 D1 NC NC Q2 D2 NC NC Q3 D3 NC NC Q4 D4 ZQ NC NC Q5 D5 NC NC Q6 D6 NC NC Q7 D7 NC NC Q8 D8 NC NC CQ NC SA x36 /C C SA SA SA SA SA SA SA Q0 D0 D9 Q9 Q1 D1 D10 Q10 Q2 D2 D11 Q11 Q3 D3 D12 Q12 Q4 D4 ZQ D13 Q13 Q5 D5 D14 Q14 Q6 D6 D15 Q15 Q7 D7 D16 Q16 Q8 D8 D17 Q17 CQ NC SA Bit # 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 Ball ID 8B 7C 6C 8A 7A 7B 6B 6A 5B 5A 4A 5C 4B 3A 2A 1A 2B 3B 1C 1B 3D 3C 1D 2C 3E 2D 2E 1E 2F 3F 1G 1F 3G 2G 1H 1J 2J 3K 3J 2K 1K 2L 3L 1M 1L 3N 3M 1N 2M x9 SA SA SA /R NC /BW K /K NC NC /W SA SA SA VSS /CQ NC NC NC NC NC NC NC NC Q5 D5 NC NC NC NC NC NC Q6 D6 /DOFF NC NC NC NC NC NC Q7 D7 NC NC NC NC NC NC Signal names x18 SA SA SA /R NC /BW0 K /K NC /BW1 /W SA SA SA VSS /CQ Q9 D9 NC NC Q10 D10 NC NC Q11 D11 NC NC Q12 D12 NC NC Q13 D13 /DOFF NC NC Q14 D14 NC NC Q15 D15 NC NC Q16 D16 NC NC x36 SA SA SA /R /BW1 /BW0 K /K /BW3 /BW2 /W SA SA NC VSS /CQ Q18 D18 D27 Q27 Q19 D19 D28 Q28 Q20 D20 D29 Q29 Q21 D21 D30 Q30 Q22 D22 /DOFF D31 Q31 Q23 D23 D32 Q32 Q24 D24 D33 Q33 Q25 D25 D34 Q34
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 21 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
Bit # 99 100 101 102 103 104
Ball ID 3P 2N 2P 1P 3R 4R
x9 Q8 D8 NC NC SA SA
Signal names x18 Q17 D17 NC NC SA SA
x36 Q26 D26 D35 Q35 SA SA
Bit # 105 106 107 108 109
Ball ID 4P 5P 5N 5R
Signal names x9 x18 x36 SA SA SA SA SA SA SA SA SA SA SA SA INTERNAL INTERNAL INTERNAL
Notes: In boundary scan mode, 1. Clock balls (K, /K, C, /C) are referenced to each other and must be at opposite logic levels for reliable operation. 2. CQ and /CQ data are synchronized to the respective C and /C (except EXTEST, SAMPLE-Z). 3. If C and /C tied high, CQ is generated with respect to K and /CQ is generated with respect to /K (except EXTEST, SAMPLE-Z). 4. ZQ must be driven to VDDQ supply to ensure consistent results.
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 22 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
ID Register
Part R1Q2A3636B R1Q2A3618B R1Q2A3609B Revision number (31:29) 000 000 000 Type number (28:12) 0 0MMM 0WW0 10Q0 B0S0 0 0010 0110 1010 0010 0 0010 0100 1010 0010 0 0010 0000 1010 0010 010:36Mb, 10: x 18, 0: DDR 0: 2-word burst 0: Common I/O Vendor JEDEC code (11:1) 0100 0100 011 0100 0100 011 0100 0100 011 001:18Mb 00: x 9, Start bit (0) 1 1 1
Notes: 1. Type number MMM :Density WW :Organization Q :QDR/DDR B :Burst lengths S :I/O
011:72Mb, 11: x 36, 1: QDR, 1: 4-word burst, 1: Separate I/O,
01: x 8
TAP Controller State Diagram
1 Test Logic Reset 0 1 Run Test/Idle 0 1
Select DR Scan
1
1
Select IR Scan
0
Capture DR
0 1 0
Capture IR
0
Shift DR
0
Shift IR
0
1
Exit1 DR
1 1 0
Exit1 IR
1 0
0
Pause DR
0
Pause IR
1 0
Exit2 DR
1 0
Exit2 IR
1
Update DR
1
Update IR
1
0
1
0
Notes:
The value adjacent to each state transition in this figure represents the signal present at TMS at the time of a rising edge at TCK. No matter what the original state of the controller, it will enter Test-Logic-Reset when TMS is held high for at least five rising edges of TCK.
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 23 of 24
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
Package Dimensions
R1Q2A3636B/R1Q2A3618B/ R1Q2A3609B (PLBG0165FB-A)
JEITA Package Code P-LBGA165-15x17-1.00 RENESAS Code PLBG0165FB-A Previous Code BP-165A MASS[Typ.] 0.7g
D A B
INDEX
y1 S S
A
y
S e
R P N M L K J H G F E D C B A
e
A1
E
Reference Symbol
Dimension in Millimeters
Min 14.90 16.90
Nom 15.00 17.00
Max 15.10 17.10
D E v w A A1 e b x
1 2 3 4 5 6 7 8 9 10 11
1.34 0.27 0.45
1.40 0.32 1.00 0.50
1.46 0.37 0.55 0.20 0.15 0.25
b
y
x M S A B 0.07 M S
y1 SD SE ZD ZE
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008 Page 24 of 24
Revision History
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B Data Sheet
Contents of Modification Description
Rev. 0.01 0.02
Date Jan.31, 2008 Feb.29,2008
Page Initial issue P7 DLL Constraints 2.the lower end of the frequency at which the DLL can operate is 119MHz P14 AC characteristics Average clock cycle time is enlarged tKHKH(-40)(max) 8.40ns, tKHKH(-50)(max) 8.40ns, tKHKH(-60)(max) 8.40ns P2 Ordering Infomatuon: Adding Part Number and Marking Name 1.Part Number (9) R: 1stGeneration,A: 2ndGeneration,B: 3rdGeneration (10:11) BG: Package type=BGA (12:13) 60: Cycle time=6.0 ns,50 : Cycle time=5.0 ns,40: Cycle time=4.0 ns 33: Cycle time=3.3 ns (14) R: Temperature range= 0C 70C,I: Temperature range= -40C 85C (15) B: Pb-free,T: Tape&Reel,S: Pb-free and Tape&Reel None: Standard (Pb and Tray) (16) 0 to 9 , A to Z: Renesas internal use 2.Marking Name Marking Name(0:14) =Part Number (0:14) ------------Pb Marking Name(0:16) =Part Number (0:14)+Bx------------Pb-free (0 9 , A Z) (Example) R1Q2A3609BBG-60R ------------Pb R1Q2A3609BBG-60RB0 ------------Pb-free
0.03
Apr.11,2008
Sales Strategic Planning Div.
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